FDME905PT Fairchild Semiconductor, FDME905PT Datasheet - Page 2

• Manufacturer Part Number: FDME905PT
• Description: This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDME905PT Rev.C2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
iss
oss
rss
ΔT
ΔT
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 60 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
= 25 °C unless otherwise noted
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DD
GS
GS
GS
= -250 μA, V
= -250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= -8 A, di/dt = 100 A/μs
= -9.6 V, V
= -5 V, I
= -6 V, V
= -4.5 V
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -4.5 V, I
= -6 V, I
= -4.5 V, R
= -6 V, I
= 0 V, I
= 0 V, I
DS
2
Test Conditions
, I
S
S
D
D
D
D
GS
= -8 A
= -1.8 A
DS
= -8 A,
D
D
D
D
= -8 A
GS
= -250 μA
= -8 A,
GEN
GS
= 0 V,
= -8 A
= -7.3 A
= -3.8 A
= -8 A, T
= 0 V
= 0 V
= 0 V
= 6 Ω
J
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b. 175 °C/W when mounted on a
-0.4
minimum pad of 2 oz copper.
Min
-12
1740
350
-0.8
-0.7
311
4.5
-0.7
9.5
2.4
Typ
17
-8.7
2.5
90
42
14
18
22
28
23
38
8
3
2315
θCA
±100
-1.2
-1.2
Max
525
465
144
-1.0
19
16
67
20
31
10
22
26
97
32
www.fairchildsemi.com
-1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
μA
nA
ns
ns
ns
ns
ns
V
V
V
S