FDME905PT Fairchild Semiconductor, FDME905PT Datasheet
FDME905PT
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FDME905PT Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device E95 FDME905PT ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C2 ® MOSFET General Description This device is designed specifically for battery charging or load = - switching in cellular handset and other ultraportable applications. ...
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... Reverse Recovery Charge rr Notes determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ©2011 Fairchild Semiconductor Corporation FDME905PT Rev. °C unless otherwise noted J Test Conditions = -250 μ -250 μ ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDME905PT Rev. °C unless otherwise noted J μ s 1.0 1 100 125 150 ...
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... Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDME905PT Rev. °C unless otherwise noted J 3000 1000 100 12 16 300 μ ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C2 5 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDME905PT Rev.C2 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...