FDD5N60NZ Fairchild Semiconductor, FDD5N60NZ Datasheet - Page 3

• Manufacturer Part Number: FDD5N60NZ
• Manufacturer: Fairchild Semiconductor

FDD5N60NZ Rev. A
Typical Performance Characteristics
1000
Figure 5. Capacitance Characteristics
0.1
Figure 3. On-Resistance Variation vs.
100
3.5
3.0
2.5
2.0
1.5
10
Figure 1. On-Region Characteristics
10
1
3
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 12.0V
10.0V
GS
8.0V
7.0V
6.5V
6.0V
5.5V
V
V
Drain Current and Gate Voltage
DS
DS
= 0V
, Drain-Source Voltage[V]
, Drain-Source Voltage [V]
2
I
D
, Drain Current [A]
(
C ds = shorted
1
1
4
*Notes:
1. 250
2. T
)
V
*Note: T
C
GS
= 25

= 10V
s Pulse Test
V
o
6
GS
C
C
10
= 20V
= 25
C
C
10
C
iss
oss
rss
o
C
20
30
8
3
0.1
10
0.1
Figure 2. Transfer Characteristics
20
10
Figure 4. Body Diode Forward Voltage
30
10
Figure 6. Gate Charge Characteristics
8
6
4
2
0
1
1
0.2
0
2
*Notes:
1. V
2. 250
V
DS
SD
0.4

2
= 20V
, Body Diode Forward Voltage [V]
s Pulse Test
V
Variation vs. Source Current
and Temperature
Q
GS
4
g
150
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
o
C
0.6
V
V
V
4
DS
DS
DS
-55
150
6
= 120V
= 300V
= 480V
o
C
25
o
C
o
C
0.8
*Notes:
1. V
2. 250
6
25
GS
*Note: I
o

8
C
= 0V
s Pulse Test
1.0
8
D
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= 4A
10
1.2
10