FDD5N60NZ Fairchild Semiconductor, FDD5N60NZ Datasheet

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FDD5N60NZ

Manufacturer Part Number
FDD5N60NZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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0
©2010 Fairchild Semiconductor Corporation
FDD5N60NZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD5N60NZ
N-Channel MOSFET
600V, 4.0A, 2
Features
• R
• Low Gate Charge ( Typ. 10nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.65 ( Typ.)@ V
( Typ. 5pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
GS
= 10V, I
G
S
D
= 2.0A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
D-PAK
o
C unless otherwise noted*
C
= 25
o
C)
D
C
C
1
= 25
= 100
o
Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode. These devices are well suited for high efficient switching
mode power supplies and active power factor correction.
C
o
C)
o
C)
 (Note 1)
 (Note 1)
 (Note 3)
(Note 2)
 (Note 1)
G
G
FDD5N60NZ
FDD5N60NZ
-55 to +150
UniFET-II
600
±25
216
300
4.0
2.4
4.0
8.3
0.7
16
10
83
1.5
90
D
D
S
S
December 2010
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
o
o
C/W
W
V
V
A
A
A
C
C
o
C
TM

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FDD5N60NZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDD5N60NZ Rev. A Description = 2.0A These N-Channel enhancement mode power field effect transistors D are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize ...

Page 2

... G 4.0A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Dual Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDD5N60NZ Rev. A Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250 ...

Page 3

... 1MHz iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDD5N60NZ Rev. A Figure 2. Transfer Characteristics  s Pulse Test 0 Figure 4. Body Diode Forward Voltage 10V ...

Page 4

... Figure 9. Maximum Safe Operating Area vs. Case Temperature Operation in This Area is Limited by R DS(on) 0.1 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDD5N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation 2.8 2.4 2.0 1.6 1.2 *Notes: 0  250 A D 0.4 80 120 160 - Figure 10. Maximum Drain Current 4  ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDD5N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD5N60NZ Rev DUT DUT Driver Driver Same Type Same Type as DUT as DUT • ...

Page 7

... Mechanical Dimensions FDD5N60NZ Rev. A D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD5N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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