FDMC86320 Fairchild Semiconductor, FDMC86320 Datasheet - Page 4

• Manufacturer Part Number: FDMC86320
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Typical Characteristics
0.01
100
0.1
10
30
10
10
8
6
4
2
0
Figure 7.
1
0.01
1
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11. Forward Bias Safe
I
D
= 10.7 A
5
V
Switching Capability
0.1
DS
Gate Charge Characteristics
t
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
AV
0.1
Operating Area
J
A
θ
Unclamped Inductive
JA
, TIME IN AVALANCHE (ms)
Q
= MAX RATED
= 25
DS(on)
g
10
= 125
, GATE CHARGE (nC)
o
C
o
V
C/W
1
DD
T
T
15
J
= 30 V
J
= 125
= 25
1
T
J
o
V
o
C
DD
C
= 25 °C unless otherwise noted
10
20
T
J
= 40 V
= 100
V
10
o
DD
25
C
100
= 50 V
100
1 ms
10 ms
1 s
10 s
DC
100 ms
μ
s
400
30
50
4
2000
1000
3000
1000
100
100
0.5
50
40
30
20
10
10
10
Figure 10.
0
1
5
10
0.1
25
Figure 12.
-4
Limited by Package
f = 1 MHz
V
SINGLE PULSE
R
T
Figure 8.
GS
Current vs Case Temperature
A
θ
JA
= 25
= 0 V
10
= 125
-3
V
V
o
50
GS
DS
C
Power Dissipation
Maximum Continuous Drain
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
= 8 V
C/W
10
C
Single Pulse Maximum
Capacitance vs Drain
, C
R
t, PULSE WIDTH (sec)
-2
θ
JC
ASE TEMPERATURE (
1
= 3.1
75
10
-1
o
C/W
V
GS
1
100
= 10 V
10
10
o
C )
C
C
C
125
V
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GS
100
= 10 V
1000
150
100