FDMC86320 Fairchild Semiconductor, FDMC86320 Datasheet - Page 3

• Manufacturer Part Number: FDMC86320
• Description: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Typical Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
50
40
30
20
10
Figure 3. Normalized On Resistance
0
0
Figure 1.
-75
2
Figure 5. Transfer Characteristics
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
-50
GS
= 10.7 A
vs Junction Temperature
= 5 V
= 10 V
3
V
T
V
V
GS
1
-25
J
DS
GS
On Region Characteristics
V
,
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 7 V
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
GS
DRAIN TO SOURCE VOLTAGE (V)
= 8 V
= 10 V
4
0
T
J
2
= 150
25
μ
s
5
o
C
50
T
J
3
= 25 °C unless otherwise noted
μ
75
6
s
T
J
T
= -55
J
o
100 125 150
C )
= 25
V
V
4
GS
GS
o
V
7
C
GS
o
= 6.5 V
= 5.5 V
C
= 6 V
8
5
3
0.001
0.01
40
30
20
10
0.1
50
10
5
4
3
2
1
0
0
Figure 2.
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
5
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
GS
GS
V
= 0 V
SD
0.2
= 5.5 V
, BODY DIODE FORWARD VOLTAGE (V)
10
V
Normalized On-Resistance
6
T
On-Resistance vs Gate to
GS
J
I
Source Voltage
D
= 150
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
V
o
GS
C
20
7
= 6 V
μ
s
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
= 10.7 A
T
30
J
8
= 25
0.8
V
GS
o
T
C
T
J
J
= 6.5 V
= -55
= 25
V
T
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40
J
GS
9
1.0
V
= 125
V
GS
o
= 7 V
o
GS
C
C
= 10 V
= 8 V
μ
o
s
C
1.2
50
10