FDZ661PZ Fairchild Semiconductor, FDZ661PZ Datasheet - Page 3

• Manufacturer Part Number: FDZ661PZ
• Description: Designed on Fairchild's advanced 1
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDZ661PZ Rev.C
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
10
10
8
6
4
2
0
Figure 3. Normalized On- Resistance
8
6
4
2
0
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
V
D
V
-50
GS
GS
GS
= -5 V
= -2 A
vs Junction Temperature
-V
= -4.5 V
= -4.5 V
= -3 V
0.5
DS
-V
T
-25
J
, DRAIN TO SOURCE VOLTAGE (V)
GS
,
On-Region Characteristics
V
JUNCTION TEMPERATURE
, GATE TO SOURCE VOLTAGE (V)
GS
= -1.5 V
V
1
0
T
GS
J
1.0
= 150
V
= -1.8 V
GS
25
μ
s
= -2.5 V
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
1.5
J
= 25 °C unless otherwise noted
T
75
T
J
2
J
= -55
= 25
(
100 125 150
o
C
2.0
o
o
)
C
C
μ
s
2.5
3
3
0.001
600
450
300
150
0.01
0.1
Figure 2.
10
3
2
1
0
0
1.0
1
0
Figure 4.
0
Forward Voltage vs Source Current
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
Figure 6.
V
Drain Current and Gate Voltage
GS
1.5
= 0 V
-V
-V
0.2
SD
Normalized On-Resistance vs
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
-
T
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
V
I
J
D
GS
2.0
Source Voltage
,
= 150
I
Source to Drain Diode
D
DRAIN CURRENT (A)
= -2 A
= -1.5 V
0.4
T
J
T
V
o
= 125
J
4
C
GS
= 25
2.5
= -1.8 V
μ
s
o
V
o
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
C
C
GS
3.0
T
= -3 V
J
6
= -55
T
0.8
J
V
3.5
= 25
o
GS
C
V
= -2.5 V
GS
o
8
C
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= -4.5 V
1.0
4.0
μ
s
10
4.5
1.2