FDMC86116LZ Fairchild Semiconductor, FDMC86116LZ Datasheet - Page 3

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FDMC86116LZ

Manufacturer Part Number
FDMC86116LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Part Number:
FDMC86116LZ
Manufacturer:
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Quantity:
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©2011 Fairchild Semiconductor Corporation
FDMC86116LZ Rev.C
Typical Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
15
12
15
12
Figure 3. Normalized On Resistance
9
6
3
0
9
6
3
0
Figure 1.
-75
1
Figure 5. Transfer Characteristics
0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
I
V
D
DS
GS
-50
= 3.3 A
= 10 V
vs Junction Temperature
= 5 V
= 10 V
V
DS
T
V
T
J
2
1
-25
GS
,
J
= 150
On Region Characteristics
,
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
0
C
3
2
25
T
μ
J
s
V
= -55
T
GS
J
50
= 25
T
= 4.5 V
o
J
4
C
3
= 25 °C unless otherwise noted
o
C
75
μ
s
o
100 125 150
C )
V
5
4
GS
V
V
GS
GS
= 3.5 V
= 3 V
= 4 V
6
5
3
0.001
500
400
300
200
100
0.01
0.1
20
10
0
5
4
3
2
1
0
Figure 2.
Figure 4.
1
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
= 0 V
SD
0.2
Normalized On-Resistance
V
, BODY DIODE FORWARD VOLTAGE (V)
V
3
On-Resistance vs Gate to
GS
GS
T
I
Source Voltage
4
J
D
Source to Drain Diode
,
= 150
= 3 V
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
I
D
J
0.4
= 25
= 3.3 A
o
C
6
o
C
μ
s
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
V
GS
T
J
= 3.5 V
= 125
9
T
0.8
J
o
= -55
C
T
J
8
= 25
www.fairchildsemi.com
o
12
V
V
C
V
GS
GS
1.0
o
GS
C
= 4.5 V
= 10 V
= 4 V
μ
s
10
15
1.2

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