FDMS8558S Fairchild Semiconductor, FDMS8558S Datasheet - Page 3

• Manufacturer Part Number: FDMS8558S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Typical Characteristics
140
120
100
140
120
100
80
60
40
20
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
Figure 3. Normalized On Resistance
0
0
Figure 1.
1.2
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 38 A
-50
vs Junction Temperature
= 5 V
= 10 V
V
1.5
DS
V
T
-25
GS
J
On Region Characteristics
,
0.2
,
T
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 125
V
V
V
GS
GS
V
GS
0
GS
= 4.5 V
= 3.5 V
1.8
o
= 10V
= 3 V
C
25
μ
s
0.4
50
T
2.1
J
= 25 °C unless otherwise noted
75
T
μ
J
s
T
= -55
0.6
J
o
100 125 150
= 25
C )
2.4
V
GS
o
C
o
= 2.5 V
C
0.8
2.7
3
0.01
200
100
0.1
Figure 2.
10
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
3
20
SD
0.2
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
V
GS
On-Resistance vs Gate to
GS
I
Source Voltage
D
4
T
= 4.5 V
Source to Drain Diode
,
40
,
J
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
= 125
0.4
5
o
T
60
C
T
J
J
μ
= 125
T
s
= 25
J
V
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= -55
GS
I
D
o
80
o
= 3.5 V
= 38 A
C
0.6
C
o
7
T
C
J
= 25
100
8
o
0.8
V
C
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V
GS
V
GS
GS
120
= 2.5 V
= 10 V
= 3 V
9
μ
s
1.0
140
10