FDMS3686S Fairchild Semiconductor, FDMS3686S Datasheet - Page 7

• Manufacturer Part Number: FDMS3686S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
Typical Characteristics (Q2 N-Channel)
100
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
0.0
1.5
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 23 A
vs Junction Temperature
= 5 V
= 10 V
T
J
0.2
2.0
V
V
T
= 125
DS
-25
GS
J
,
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
V
o
C
GS
0
0.4
2.5
= 3.5 V
V
25
GS
μ
s
V
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 4 V
GS
J
= -55
50
= 4.5 V
0.6
3.0
T
J
V
o
= 25
C
GS
75
= 10 V
o
C
o
100 125 150
C )
0.8
3.5
V
GS
= 3 V
μ
s
1.0
4.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
12
10
4
3
2
1
0
9
6
3
0
1
Figure 17. On-Resistance vs Gate to
0
0.0
Forward Voltage vs Source Current
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
T
0.2
V
GS
20
J
SD
V
= 125
= 3 V
, BODY DIODE FORWARD VOLTAGE (V)
GS
Source Voltage
4
,
GATE TO SOURCE VOLTAGE (V)
V
o
I
GS
D
C
0.4
T
,
J
DRAIN CURRENT (A)
= 3.5 V
40
= -55
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
= 25
V
o
GS
0.6
C
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
= 4 V
I
D
C
= 23 A
60
V
GS
0.8
= 4.5 V
8
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80
T
T
V
J
J
GS
1.0
μ
= 125
= 25
s
= 10 V
o
μ
o
C
s
C
100
1.2
10