FDMS3686S Fairchild Semiconductor, FDMS3686S Datasheet - Page 3

• Manufacturer Part Number: FDMS3686S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS3686S Rev.C1
Notes:
1. R
by the user's board design.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. Q1: E
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
Q2: E
SD
rr
Symbol
qJA
is determined with the device mounted on a 1 in
AS
AS
of 40 mJ is based on starting T
of 60 mJ is based on starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
c. 125 °C/W when mounted on a
J
J
= 25
= 25
a. 57 °C/W when mounted on
minimum pad of 2 oz copper
a 1 in
o
o
C; N-ch: L = 1 mH, I
C; N-ch: L = 1 mH, I
2
pad of 2 oz copper
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25 °C unless otherwise noted
AS
AS
= 9 A, V
= 11 A, V
V
V
V
V
Q1
I
Q2
I
F
F
GS
GS
GS
GS
= 13 A, di/dt = 100 A/μs
= 23 A, di/dt = 300 A/μs
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
DD
DD
= 27 V, V
Test Conditions
= 27 V, V
3
S
S
S
S
= 13 A
= 23 A
= 2 A
= 2 A
GS
GS
= 10 V. 100% test at L= 0.3 mH, I
= 10 V. 100% test at L= 0.3 mH, I
(Note 2)
(Note 2)
(Note 2)
(Note 2)
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
qJC
Type
b. 50 °C/W when mounted on
Q1
Q1
Q2
Q2
Q1
Q2
Q1
Q2
a 1 in
is guaranteed by design while R
AS
2
AS
pad of 2 oz copper
= 14 A.
Min
= 17 A.
Typ
0.72
0.82
0.58
0.76
25
25
23
9
www.fairchildsemi.com
Max
1.2
1.2
1.2
1.2
40
39
18
36
qCA
is determined
Units
nC
ns
V