FJB3307D Fairchild Semiconductor, FJB3307D Datasheet - Page 2

• Manufacturer Part Number: FJB3307D
• Manufacturer: Fairchild Semiconductor

© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
Electrical Characteristics
* Pulse test: PW = 300μs, Duty Cycle = 2% Pulsed
h
FE
Symbol
V
V
BV
BV
BV
h
h
CE(sat)
BE(sat)
I
t
t
C
EBO
STG
STG
V
Classification
FE1
FE2
t
t
CBO
CEO
EBO
ob
F
F
F
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage I
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Diode Forward Voltage
Output Capacitance
Storage Time
Fall Time
Storage Time
Fall Time
Classification
h
FE1
Parameter
T
a
= 25°C unless otherwise noted
I
I
V
V
V
I
I
I
I
I
I
I
I
V
V
V
I
V
V
C
C
E
C
C
C
C
C
C
C
C
I
B1
B1
EB
CE
CE
CB
CC
CC
BE(OFF)
CLAMP
= 500μA, I
= 500μA, I
= 5mA, I
= 2A, I
= 5A, I
= 5A, I
= 8A, I
= 2A, I
= 5A, I
= 5A, I
= 3A
=1A, R
= -I
= 9V, I
= 5V, I
= 5V, I
= 10V, I
= 125V, I
= 30V, I
2
B2
Conditions
= 250V
= -5V,
B
B
B
B
B
B
B
BB
= 1A, R
B
C
C
C
= 0.4A
= 1A
= 1A, T
= 2A
= 0.4A
= 1A
= 1A, T
15 ~ 28
E
C
= 0
C
= 0
= 0Ω,
E
= 2A
= 5A
C
= 0, f = 1MHz
= 5A, L=200μH
H1
= 0
= 0
= 5A
a
a
L
= 100°C
= 100°C
= 50Ω
Min.
700
400
9
8
5
Typ.
60
26 ~ 39
H2
Max. Units
150
1.2
1.6
2.5
0.7
2.3
40
30
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1
1
2
3
3
2
3
mA
pF
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V