FJB3307D Fairchild Semiconductor, FJB3307D Datasheet

no-image

FJB3307D

Manufacturer Part Number
FJB3307D
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJB3307DTM
Manufacturer:
FAIRCHILD
Quantity:
8 000
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
FJB3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Absolute Maximum Ratings
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed
Thermal Characteristics
Symbol
Symbol
V
V
V
T
R
R
I
I
P
CBO
CEO
EBO
T
STG
I
CP
I
BP
C
B
θja
θjc
D
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
Junction Temperature
Storage Temperature
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
1.Base 2.Collector
1
D
T
2
a
-PAK
Parameter
Parameter
= 25°C unless otherwise noted
3.Emitter
1
T
T
a
c
= 25°C
= 25°C
B
Internal Schematic Diagram
C
E
-55 to 150
Value
Value
1.72
72.5
1.56
700
400
150
16
80
9
8
4
8
www.fairchildsemi.com
March 2012
Units
Units
°C/W
°C/W
°C
°C
W
W
V
V
V
A
A
A
A

Related parts for FJB3307D

FJB3307D Summary of contents

Page 1

... Pulse Test 300μs, Duty Cycle = 2% Pulsed Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Ambient θja R Thermal Resistance, Junction to Case θjc © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 Internal Schematic Diagram -PAK 3.Emitter T = 25°C unless otherwise noted a Parameter Parameter T = 25° ...

Page 2

... Fall Time F t Storage Time STG t Fall Time F * Pulse test 300μs, Duty Cycle = 2% Pulsed h Classification FE Classification h FE1 © 2012 Fairchild Semiconductor Corporation FJB3307D Rev 25°C unless otherwise noted a Conditions I = 500μ 5mA 500μ ...

Page 3

... 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Collector Output Capacitance 1000 f = 1MHz 100 [V], COLLECTOR-BASE VOLTAGE CB © 2012 Fairchild Semiconductor Corporation FJB3307D Rev =300mA B I =250mA B I =200mA B I =150mA B I =100mA B I =50mA B 6.0 7.2 8.4 9.6 10.8 12.0 Figure 4. Base-Emitter Saturation Voltage ...

Page 4

... I [A], COLLECTOR CURRENT C Figure 11. Reverse Bias Safe Operating Area 200 300 400 V [V], COLLECTOR-EMITTER VOLTAGE CE © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 (Continued) 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1. 50V 1mH (off) = -5V -1. ...

Page 5

... Typical Performance Characteristics Figure 13. Forward Biased Safe Operating Area 100 I (MAX), Pulse (MAX 0 Single Pulse 0. [V], COLLECTOR-EMITTER VOLTAGE CE © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 (Continued) μ μ 100 s 1ms 100 1000 5 www.fairchildsemi.com ...

Page 6

... Physical Dimensions © 2012 Fairchild Semiconductor Corporation FJB3307D Rev -PAK 6 Dimensions in Millimeters www.fairchildsemi.com ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool F-PFS FRFET AccuPower Global Power Resource AX-CAP * GreenBridge BitSiC Green FPS Build it Now ...

Related keywords