FJB3307D Fairchild Semiconductor, FJB3307D Datasheet
FJB3307D
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FJB3307D Summary of contents
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... Pulse Test 300μs, Duty Cycle = 2% Pulsed Thermal Characteristics Symbol P Total Device Dissipation D R Thermal Resistance, Junction to Ambient θja R Thermal Resistance, Junction to Case θjc © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 Internal Schematic Diagram -PAK 3.Emitter T = 25°C unless otherwise noted a Parameter Parameter T = 25° ...
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... Fall Time F t Storage Time STG t Fall Time F * Pulse test 300μs, Duty Cycle = 2% Pulsed h Classification FE Classification h FE1 © 2012 Fairchild Semiconductor Corporation FJB3307D Rev 25°C unless otherwise noted a Conditions I = 500μ 5mA 500μ ...
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... 0.1 0.01 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Collector Output Capacitance 1000 f = 1MHz 100 [V], COLLECTOR-BASE VOLTAGE CB © 2012 Fairchild Semiconductor Corporation FJB3307D Rev =300mA B I =250mA B I =200mA B I =150mA B I =100mA B I =50mA B 6.0 7.2 8.4 9.6 10.8 12.0 Figure 4. Base-Emitter Saturation Voltage ...
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... I [A], COLLECTOR CURRENT C Figure 11. Reverse Bias Safe Operating Area 200 300 400 V [V], COLLECTOR-EMITTER VOLTAGE CE © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 (Continued) 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1. 50V 1mH (off) = -5V -1. ...
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... Typical Performance Characteristics Figure 13. Forward Biased Safe Operating Area 100 I (MAX), Pulse (MAX 0 Single Pulse 0. [V], COLLECTOR-EMITTER VOLTAGE CE © 2012 Fairchild Semiconductor Corporation FJB3307D Rev. A1 (Continued) μ μ 100 s 1ms 100 1000 5 www.fairchildsemi.com ...
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... Physical Dimensions © 2012 Fairchild Semiconductor Corporation FJB3307D Rev -PAK 6 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool F-PFS FRFET AccuPower Global Power Resource AX-CAP * GreenBridge BitSiC Green FPS Build it Now ...