FJAFS1510A Fairchild Semiconductor, FJAFS1510A Datasheet - Page 3

• Manufacturer Part Number: FJAFS1510A
• Manufacturer: Fairchild Semiconductor

FJAFS1510A Rev. A1
© 2012 Fairchild Semiconductor Corporation
ESBC Configured Electrical Characteristics *
* Used typical FDC655 MOSFET specifications in table. Table could vary if other Fairchild MOSFETs are used.
Symbol
V
Q
r
I
V
V
GS(OS)
DS(ON)
CS(ON)
GS(tot)
GS(th)
C
Vt
Vt
Vt
Vt
CSW
f
It
t
t
t
t
It
T
iss
s
c
s
c
f
r
f
r
f
f
Current Gain Bandwidth Product
Inductive Current Fall Time
Inductive Storage Time
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
Inductive Current Fall Time
Inductive Storage Time
Inductive Voltage Fall Time
Inductive Voltage Rise Time
Inductive Crossover Time
Maximum Collector Source Volt-
age at Turn-off without Snubber
Gate-Source Leakage Current
Collector-Source On Voltage
Gate Threshold Voltage
Input Capacitance (V
Gate-Source Change V
Static Drain to Source
On Resistance
Parameter
GS
CB
=V
=0
CB
=0)
V
V
I
L
SRF=350KHz
V
V
I
L
SRF=350KHz
h
V
V
V
V
V
V
V
V
V
V
V
I
C
C
C
C
C
FE
GS
Clamp
GS
Clamp
GS
GS
GS
GS
GS
BS
CS
GS
GS
GS
GS
=0.1A,V
=1A, I
=5A, I
=1mH,
=1mH,
=5, I
=V
=25V, f=1MHz
=10V, R
=10V, R
=±20V
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
=10V, I
=4.5V, I
=500V,
=500V,
GS,
B
B
C
Test Conditions
=0.1A, h
=1A, h
=6A
CE
I
B
C
C
C
C
C
D
D
3
D
G
G
=250μA
=6A, I
=4A, I
=2A, I
=1A, I
=6A, V
=6.3A
=6.3A, T
=10V
=5.5A
=47Ω,
=47Ω,
FE
FE
=5
B
B
B
B
T
CS
=2A, h
=1.3A, h
=0.67A, h
=0.2A, h
=10
a
a
= 25°C unless otherwise noted
=25V
=125°C
FE
FE
FE
=3
FE
=3
=5
=3
Min.
1550
0.426
0.213
0.162
0.141
Typ.
1100
15.4
12.5
115
670
160
130
110
150
470
1.0
1.9
95
68
21
30
26
9
Max. Units
www.fairchildsemi.com
MHz
mΩ
mΩ
mΩ
nC
nA
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V