FJAFS1510A Fairchild Semiconductor, FJAFS1510A Datasheet
FJAFS1510A
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FJAFS1510A Summary of contents
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... Other Fairchild MOSFETs can be used in this ESBC application. © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 Description The FJAFS1510A is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1550 volts and up to 6amps while providing exceptionally low on-resistance and very low switching losses ...
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... Base-Emitter Breakdown Voltage I EBO h DC Current Gain FE1 h FE2 V (sat) Collector-Emitter Saturation CE Voltage C Output Capacitance ob © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev 25°C unless otherwise noted a Parameter = 25° 25°C unless otherwise note a Parameter T = 25°C unless otherwise noted a Test Conditions ...
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... Input Capacitance (V iss Q Gate-Source Change V GS(tot) r Static Drain to Source DS(ON) On Resistance * Used typical FDC655 MOSFET specifications in table. Table could vary if other Fairchild MOSFETs are used. © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev 25°C unless otherwise noted a Test Conditions I =0.1A,V =10V =10V, R =47Ω ...
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... 0.1 0.01 0 [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 100 10 1 0.1 0 [A], COLLECTOR CURRENT C Figure 5. Collector-Emitter Saturation Voltage h =10 FE © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 100 I =0. =0. =0. 100 125 ...
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... ESBC 40 0.5 1.0 1.5 2.0 2.5 3.0 I [A], COLLECTOR CURRENT C Figure 11. Inductive Load Collector Voltage Fall-time (t © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 (Continued) 1000 100 0.8 1.0 1 L=1mH SRF=350KHz a 2.0 1.5 hfe=5 common emitter 1 ...
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... Figure 15. ESBC RBSOA 100 C], CASE TEMPERATURE Figure 17. Power Derating © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 (Continued hfe=10 common emitter 5 4 hfe=5 ESBC 3.5 4.0 4.5 5.0 5.5 6.0 Figure 14. Reverse Bias Safe Operating Area ) c Ω ...
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... Test Circuits Fig1. Test Circuit For Inductive Load and Reverse Bias Safe Operating Fig3. Ft Measurement © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev Fig2. Energy Rating Test Circuit Fig4. FBSOA www.fairchildsemi.com ...
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... Test Circuits (Continued) Figure 5. Simplified Saturated Switch Driver Circuit Functional Test Waveforms © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 Figure 1. Crossover Time Measurement 90% Vce 10% Vce Figure 2. Saturated Switching Waveform 8 90% Ic 10% Ic www.fairchildsemi.com ...
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... Functional Test Waveforms Figure 3. Storage Time - Common Emitter Base turn off (Ib2 Fall-time © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 (Continued) Figure 4. Storage Time - ESBC FET Gate (off Fall-time 9 www.fairchildsemi.com ...
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... Very Wide Input Voltage Range Supply - 30watt; SecReg: 3 cap input; Quasi Resonant Driving ESBC Switches Vcc Derived © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev Vbias Supply Derived 10 Fairchild Proprietary Proportional Drive www.fairchildsemi.com ...
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... Physical Dimensions 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ±0.30 © 2012 Fairchild Semiconductor Corporation FJAFS1510A Rev. A1 TO-3PF ±0.20 15.50 ±0.20 ø3.60 0.85 2.00 ±0.20 5.45TYP ] [5.45 ±0. ±0.20 5.50 ±0.20 3.00 (1.50) ±0.03 ±0.20 2.00 3.30 ±0.20 +0.20 0.90 –0.10 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool F-PFS FRFET AccuPower Global Power Resource AX-CAP * GreenBridge BitSiC Green FPS Build it Now ...