FGA30N60LSD Fairchild Semiconductor, FGA30N60LSD Datasheet - Page 3
FGA30N60LSD
Manufacturer Part Number
FGA30N60LSD
Description
The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA30N60LSD.pdf
(9 pages)
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FGA30N60LSD Rev. A
Electrical Characteristics of the Diode
V
I
t
t
t
Q
RM
rr
a
b
FM
rr
Parameter
I
I
V
I
I
I
F
F
F
F
F
R
= 15A
= 15A
=1A, di/dt = 100A/µs, V
=15A, di/dt = 100A/µs, V
=15A, di/dt = 100A/µs, V
= 600V
Conditions
CC
CC
CC
= 30V
= 390V
= 390V
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Min.
-
-
-
-
-
-
-
-
Typ.
27.5
1.8
1.6
18
13
-
-
-
Max
100
2.2
35
40
-
-
-
-
www.fairchildsemi.com
Units
µA
nC
ns
ns
ns
ns
V
V