FGA30N60LSD Fairchild Semiconductor, FGA30N60LSD Datasheet

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FGA30N60LSD

Manufacturer Part Number
FGA30N60LSD
Description
The FGA30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA30N60LSDTU
Manufacturer:
FAIRCHILD
Quantity:
10 000
©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev. A
FGA30N60LSD
Features
• Low saturation voltage: V
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
P
T
T
T
R
R
R
C
CM (1)
FSM
stg
J
L
CES
GES
D
Symbol
θJC
θJC
θJA
Symbol
(IGBT)
(Diode)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
CE(sat)
=1.1V @ I
Description
Parameter
C
= 30A
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
1
General Description
The FGA30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
FGA30N60LSD
Typ.
--
--
--
G
G
-55 to +150
-55 to +150
± 20
600
150
480
192
300
60
30
90
Max.
C
C
0.26
0.92
E
E
40
October 2008
www.fairchildsemi.com
Units
°C
°C
°C
Units
W
W
V
V
A
A
A
A
°C/W
°C/W
°C/W
tm

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FGA30N60LSD Summary of contents

Page 1

... Fairchild Semiconductor Corporation FGA30N60LSD Rev. A General Description = 30A The FGA30N60LSD is a MOS gated high voltage switching C device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... Turn-On Switching Loss on E Turn-Off Switching Loss off Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc L Internal Emitter Inductance e FGA30N60LSD Rev. A Packaging Package Type Qty per Tube TO-3PN Tube T = 25°C unless otherwise noted C Test Conditions 250uA ...

Page 3

... 600V =1A, di/dt = 100A/µ =15A, di/dt = 100A/µ =15A, di/dt = 100A/µ FGA30N60LSD Rev 25°C unless otherwise noted C Conditions = 25 ° 125 ° ° °C = 30V °C = 390V ° ...

Page 4

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.4 Common Emitter V = 15V GE 1.2 1.0 0.8 0 Collector-EmitterCase Temperature, T FGA30N60LSD Rev. A Figure 2. Typical Saturation Voltage 20V T GE 15V 12V 10V [V] CE Figure 4. Transfer characteristics 90 Common Emitter ...

Page 5

... Current : peak of square wave Duty cycle : 50 100 C c Powe Dissipation = 192W 0 0 Frequency [kHz] FGA30N60LSD Rev. A (Continued) Figure 8. Capacitance characteristics 13000 Common Emitter 10000 125 C C 1000 100 [V] GE Figure 10. SOA Characteeristics ...

Page 6

... Collector Current 6000 t f 1000 t d(off) 100 Collector Current, I Figure 17.Switching Loss vs Collector Current 100 Collector Current, I FGA30N60LSD Rev. A (Continued) Figure 14. Turn-On Characteristics vs. 500 100 Common Emitter V = 400V 15V 30A 125 ...

Page 7

... 100 200 di/dt [A/ FGA30N60LSD Rev. A single pulse 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] Figure 21. Typical Reverse Current 1E-4 1E-5 1E-6 1E-7 1E-8 1E-9 2.0 2.4 2.8 3 15A 125 300 ...

Page 8

... FGA30N60LSD Rev www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA30N60LSD Rev. A FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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