FGL35N120FTD Fairchild Semiconductor, FGL35N120FTD Datasheet - Page 6
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FGL35N120FTD
Manufacturer Part Number
FGL35N120FTD
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGL35N120FTD.pdf
(9 pages)
FGL35N120FTD Rev. A
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
2000
1000
100
600
100
0.3
10
50
50
1
10
10
0
Common Emitter
V
I
T
T
Common Emitter
V
T
T
C
C
C
CC
C
C
GE
= 35A
Collector Current
= 25
= 125
= 25
= 125
Gate Resistance
= 600V, V
= 15V, R
20
20
o
10
o
C
o
C
o
C
C
Gate Resistance, R
Collector Current, I
Collector Current, I
G
GE
30
30
= 10
= 15V
20
Ω
40
40
E
t
E
t
d(off)
f
on
off
Common Emitter
V
T
T
30
C
C
GE
t
= 25
= 125
t
G
C
d(off)
f
50
50
= 15V, R
[ Ω ]
C
[A]
[A]
o
C
o
C
40
G
60
60
= 10
Ω
70
50
70
6
Figure 18. Turn off Switing
Figure 14. Turn-on Characteristics vs.
Figure 16.Switching Loss vs. Gate Resistance
200
100
200
100
0.3
10
10
1
8
1
10
0
1
Safe Operating Area
V
GE
= 15V, T
Collector Current
SOA Characteristics
20
Collector-Emitter Voltage, V
10
Collector Current, I
Gate Resistance, R
10
C
= 125
30
20
t
t
o
r
d(on)
C
40
E
E
on
off
Common Emitter
V
I
T
T
100
C
CC
C
C
Common Emitter
V
T
T
= 35A
30
= 25
= 125
C
C
GE
= 600V, V
= 25
= 125
50
C
G
= 15V, R
o
[A]
[ Ω ]
C
o
o
C
C
o
CE
C
40
[V]
GE
G
60
www.fairchildsemi.com
1000 3000
= 10
= 15V
Ω
70
50