FGL35N120FTD Fairchild Semiconductor, FGL35N120FTD Datasheet
FGL35N120FTD
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FGL35N120FTD Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FGL35N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche = 35A C ruggedness ...
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... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGL35N120FTD Rev. A Package Reel Size TO-264 - T = 25°C unless otherwise noted C Test Conditions = 0V 250µ ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery rr Current Q Diode Reverse Recovery Charge rr FGL35N120FTD Rev 25°C unless otherwise noted C Test Conditions 35A 125 ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Common Emitter V = 15V 2.6 GE 2.4 2.2 2.0 1.8 1.6 1.4 1 Collector-EmitterCase Temperature, T FGL35N120FTD Rev. A Figure 2. Typical Output Characteristics 180 150 12V 120 90 10V [V] CE Figure 4. Transfer Characteristics 120 100 80 ...
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... Figure 11. SOA Characteristics 400 100 10 1 *Notes: 0 150 Single Pulse 0. 100 Collector-Emitter Voltage, V FGL35N120FTD Rev. A Figure 8. Load Current vs. Frequency GE 150 Common Emitter 125 C C 120 [V] GE Figure 10. Gate Charge Characteristics 15 Common Emitter 1MHz ...
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... Collector Current, I Figure 17. Switching Loss vs. Collector Current 0 Collector Current, I FGL35N120FTD Rev. A Figure 14. Turn-on Characteristics vs. t d(off Ω Figure 16.Switching Loss vs. Gate Resistance [A] C Figure 18. Turn off Switing on off Common Emitter Ω ...
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... Forward Voltage, V Figure 21. Stored Charge 1.4 1.2 µ di/dt = 200A/ s 1.0 di/dt = 100A/ 0.8 0 Forward Current, I Figure 23.Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 1E-5 FGL35N120FTD Rev. A Figure 20. Reverse Recovery Current 125 C C 2.0 2.5 3.0 [V] F Figure 22. Reverse Recovery Time 600 500 400 300 µ ...
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... Mechanical Dimensions FGL35N120FTD Rev Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGL35N120FTD Rev. A ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...