ISL9R8120S3S Fairchild Semiconductor, ISL9R8120S3S Datasheet - Page 5
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ISL9R8120S3S
Manufacturer Part Number
ISL9R8120S3S
Description
The ISL9R8120P2 and ISL9R8120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications
Manufacturer
Fairchild Semiconductor
Datasheet
1.ISL9R8120S3S.pdf
(6 pages)
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©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
V
Test Circuit and Waveforms
V
R
t
GE
1 AND
GE
G
I = 1A
L = 40mH
R < 0.1
V
E
Q
Figure 15. Avalanche Energy Test Circuit
CONTROL dI
DD
AVL
1
AMPLITUDE AND
= IGBT (BV
t
2
= 50V
= 1/2LI
CONTROL I
0.01
1.0
0.1
t
1
10
2
-5
Figure 13. It
[V
t
CES
F
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
2
/dt
R(AVL)
F
> DUT V
SINGLE PULSE
/(V
Q
R(AVL)
1
R(AVL)
Figure 12. Normalized Maximum Transient Thermal Impedance
R
G
- V
rr
)
DD
10
Test Circuit
-4
)]
DUT
CURRENT
L
SENSE
MOSFET
DUT
CURRENT
L
SENSE
10
R
-3
+
V
V
-
t, RECTANGULAR PULSE DURATION (s)
DD
DD
-
+
V
DD
10
I V
-2
0
Figure 16. Avalanche Current and Voltage
Figure 14. t
t
0
I
F
dI
dt
F
I
L
rr
10
-1
Waveforms and Definitions
Waveforms
t
NOTES:
DUTY FACTOR: D = t
PEAK T
1
V
I
t
AVL
L
J
a
= P
DM
t
t
2
rr
x Z
10
ISL9R8120P2 / ISL9R8120S3S Rev. A
P
0
DM
t
JA
b
1
/t
x R
2
t
JA
1
0.25 I
I
t
RM
2
+ T
t
A
RM
10
1