ISL9R8120S3S Fairchild Semiconductor, ISL9R8120S3S Datasheet - Page 5

• Manufacturer Part Number: ISL9R8120S3S
• Description: The ISL9R8120P2 and ISL9R8120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
V
Test Circuit and Waveforms
V
R
t
GE
1 AND
GE
G
I = 1A
L = 40mH
R < 0.1
V
E
Q
Figure 15. Avalanche Energy Test Circuit
CONTROL dI
DD
AVL
1
AMPLITUDE AND
= IGBT (BV
t
2
= 50V
= 1/2LI
CONTROL I
0.01
1.0
0.1
t
1
10
2
-5
Figure 13. It
[V
t
CES
F
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
2
/dt
R(AVL)
F
> DUT V
SINGLE PULSE
/(V
Q
R(AVL)
1
R(AVL)
Figure 12. Normalized Maximum Transient Thermal Impedance
R
G
- V
rr
)
DD
10
Test Circuit
-4
)]
DUT
CURRENT
L
SENSE
MOSFET
DUT
CURRENT
L
SENSE
10
R
-3
+
V
V
-
t, RECTANGULAR PULSE DURATION (s)
DD
DD
-
+
V
DD
10
I V
-2
0
Figure 16. Avalanche Current and Voltage
Figure 14. t
t
0
I
F
dI
dt
F
I
L
rr
10
-1
Waveforms and Definitions
Waveforms
t
NOTES:
DUTY FACTOR: D = t
PEAK T
1
V
I
t
AVL
L
J
a
= P
DM
t
t
2
rr
x Z
10
ISL9R8120P2 / ISL9R8120S3S Rev. A
P
0
DM
t
JA
b
1
/t
x R
2
t
JA
1
0.25 I
I
t
RM
2
+ T
t
A
RM
10
1