ISL9R8120S3S Fairchild Semiconductor, ISL9R8120S3S Datasheet - Page 4

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ISL9R8120S3S

Manufacturer Part Number
ISL9R8120S3S
Description
The ISL9R8120P2 and ISL9R8120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL9R8120S3ST
Quantity:
800
©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
Figure 7. Reverse Recovery Softness Factor vs
12
11
10
500
400
300
200
100
Figure 9. Junction Capacitance vs Reverse
9
8
7
6
5
4
3
2
100
0.03
0
200
0.1
dI
I
F
F
300
I
= 4A
F
/dt, CURRENT RATE OF CHANGE (A/µs)
= 16A
V
400
R
, REVERSE VOLTAGE (V)
Voltage
dI
500
1
F
/dt
I
F
= 8A
600
8
4
0
6
2
V
700
90
Figure 11. DC Current Derating Curve
R
= 780V, T
10
800
100
C
f = 1MH
= 125
900
T
C
o
, CASE TEMPERATURE (
C
110
Z
1000
100
120
Figure 10. Reverse Recovery Current and Times
Figure 8. Reverse Recovered Charge vs dI
-4.4
-4.8
-5.2
-5.6
-6.0
2000
1800
1600
1400
1200
1000
800
600
400
100
25
130
V
R
o
C)
t
= 780V, T
200
RR
dI
50
140
F
I
F
vs Case Temperature
300
/dt, CURRENT RATE OF CHANGE (A/µs)
T
= 8A, V
I
C
C
RM(REC)
, CASE TEMPERATURE (
= 125
400
R
150
o
75
C
= 780V, dI
500
F
100
600
/dt = 200A/µs
ISL9R8120P2 / ISL9R8120S3S Rev. A
700
o
C)
125
800
I
I
F
I
F
F
= 16A
= 4A
900
= 8A
150
F
500
400
350
300
450
/dt
1000

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