BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet - Page 7

• Manufacturer Part Number: BLF6H10LS-160
• Description: A 160 W LDMOS RF power transistor for base station applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 10.
BLF6H10L-160_6H10LS-160
Objective data sheet
CAUTION
Document ID
BLF6H10L-160_6H10LS-160 v.1
Revision history
Table 9.
Acronym
3GPP
CDMA
CCDF
DPCH
EDGE
GSM
HF
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Abbreviations
Release date
20120210
All information provided in this document is subject to legal disclaimers.
BLF6H10L-160; BLF6H10LS-160
Rev. 1 — 10 February 2012
Description
3rd Generation Partnership Project
Code Division Multiple Access
Complementary Cumulative Distribution Function
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile Communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Objective data sheet
Change notice
-
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
Supersedes
-
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