BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet - Page 5

• Manufacturer Part Number: BLF6H10LS-160
• Description: A 160 W LDMOS RF power transistor for base station applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Package outline
Fig 3.
BLF6H10L-160_6H10LS-160
Objective data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
inch
mm
Package outline SOT467C
VERSION
OUTLINE
SOT467C
0.184
0.155
4.67
3.94
A
0.220
0.210
5.59
5.33
H
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
0.364
0.356
9.25
9.04
D
0.365
0.355
9.27
9.02
D 1
0.233
0.227
All information provided in this document is subject to legal disclaimers.
5.92
5.77
JEDEC
E
BLF6H10L-160; BLF6H10LS-160
D 1
U 1
REFERENCES
0.235
0.225
D
q
b
5.97
5.72
Rev. 1 — 10 February 2012
E 1
3
0
1
2
0.065
0.055
1.65
1.40
F
scale
18.54
17.02
EIAJ
0.73
0.67
w 2
H
5
p
M
C
0.135
0.125
3.43
3.18
C
M
p
10 mm
0.087
0.077
2.21
1.96
w 1
F
B
Q
M
A
14.27
0.562
M
q
B
M
20.45
20.19
0.805
0.795
U 1
E 1
PROJECTION
EUROPEAN
0.235
0.225
5.97
5.72
U 2
c
Q
Power LDMOS transistor
0.010 0.020
0.25
w 1
0.51
w 2
E
© NXP B.V. 2012. All rights reserved.
ISSUE DATE
99-12-06
99-12-28
SOT467C
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