BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet - Page 6

• Manufacturer Part Number: BLF6H10LS-160
• Description: A 160 W LDMOS RF power transistor for base station applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Fig 4.
BLF6H10L-160_6H10LS-160
Objective data sheet
Earless LDMOST ceramic package; 2 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
Unit
SOT467B
Outline
version
Package outline SOT467B
(1)
max
nom
max
nom
min
min
0.184
0.155
4.67
3.94
A
5.59
5.33
0.22
0.21
b
0.006
0.004
0.15
0.10
IEC
c
H
0.364
0.356
9.25
9.04
D
U
A
2
0.365
0.355
9.27
9.02
D
1
JEDEC
0.233
0.227
5.92
5.77
All information provided in this document is subject to legal disclaimers.
E
0.235
0.225
5.97
5.72
References
E
BLF6H10L-160; BLF6H10LS-160
1
D
U
Rev. 1 — 10 February 2012
D
3
b
1
1
0.065
0.055
1.65
1.40
F
1
2
0
18.29
17.27
0.72
0.68
JEITA
H
scale
w
2
0.087
0.077
2.21
1.96
D
Q
F
5 mm
A
0.385
0.375
9.78
9.53
U
1
E
0.235
0.225
1
5.97
5.72
U
2
0.25
0.01
Q
w
2
c
European
projection
E
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
Issue date
09-10-27
11-08-18
sot467b_po
SOT467B
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