BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet - Page 2

• Manufacturer Part Number: BLF6H10LS-160
• Description: A 160 W LDMOS RF power transistor for base station applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6H10L-160_6H10LS-160
Objective data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
BLF6H10L-160 (SOT467C)
1
2
3
BLF6H10LS-160 (SOT467B)
1
2
3
Type number
BLF6H10L-160
BLF6H10LS-160 -
Symbol
V
V
T
T
Symbol
R
stg
j
DS
GS
th(j-c)
Connected to flange.
R
th(j-c)
is measured under RF conditions.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction to case
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
All information provided in this document is subject to legal disclaimers.
Package
Name
-
BLF6H10L-160; BLF6H10LS-160
Rev. 1 — 10 February 2012
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless LDMOST ceramic package; 2 leads
[1]
[1]
Conditions
Simplified outline
Conditions
T
P
case
L(AV)
1
2
1
2
= 80 C;
= 70 W
3
Power LDMOS transistor
Min
-
0.5
65
-
3
Graphic symbol
© NXP B.V. 2012. All rights reserved.
[1]
200
Max
104
+13
+150
2
2
sym112
sym112
Typ
0.95
Version
SOT467C
SOT467B
1
3
1
3
Unit
V
V
C
C
Unit
K/W
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