BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet - Page 4

• Manufacturer Part Number: BLF6H10LS-160
• Description: A 160 W LDMOS RF power transistor for base station applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLF6H10L-160_6H10LS-160
Objective data sheet
7.1 Ruggedness in class-AB operation
7.2 Impedance information
The BLF6H10L-160 and BLF6H10LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
circuit.
Table 8.
Simulated Z
f
(MHz)
925
942
960
Fig 2.
DS
= 50 V; f = 860 MHz at rated power. Ruggedness is measured in the application
Definition of transistor impedance
Typical impedance
S
and Z
All information provided in this document is subject to legal disclaimers.
L
test circuit impedances.
BLF6H10L-160; BLF6H10LS-160
Rev. 1 — 10 February 2012
Z
()
1.0 j0.39
1.0 j0.50
1.0 j0.58
S
gate
Z
S
001aaf059
Z
drain
L
Z
()
2.2 + j0.55
2.2 + j0.45
2.2 + j0.47
L
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
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