BLF6H10LS-160 NXP Semiconductors, BLF6H10LS-160 Datasheet - Page 3

• Manufacturer Part Number: BLF6H10LS-160
• Description: A 160 W LDMOS RF power transistor for base station applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
T
[1]
BLF6H10L-160_6H10LS-160
Objective data sheet
Symbol
V
V
I
I
I
R
C
C
C
DSS
DSX
GSS
j
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
= 25
I
D
is the drain current.

C unless otherwise specified.
DC characteristics
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Table 7.
T
Symbol Parameter
2-carrier W-CDMA
V
I
P
G

ACPR
Dq
h
Fig 1.
D
DS
L(AV)
p
= 25

C unless otherwise specified.
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
adjacent channel power ratio
V
Output capacitance as a function of drain-source voltage; typical values
GS
RF characteristics
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
BLF6H10L-160; BLF6H10LS-160
C
(pF)
Rev. 1 — 10 February 2012
oss
200
160
120
80
40
V
V
V
V
Conditions
V
V
V
V
V
0
GS
DS
GS
GS
GS
GS
GS
GS
GS
0
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GSth
GSth
D
20
+ 3.75 V; V
+ 3.75 V; I
DS
DS
DS
DS
D
= 1.35 mA
DS
= 135 mA
= 50 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
Conditions
= 0 V
40
D
DS
= 4.5 A
= 10 V
60
V
001aal074
DS
(V)
[1]
[1]
[1]
80
Power LDMOS transistor
Min
104
1.4
-
-
-
-
-
-
-
Min Typ Max Unit
-
-
-
-
-
-
Typ
-
-
-
21
-
210
100
33.5
1
© NXP B.V. 2012. All rights reserved.
50
600 -
38
20
27
32 -
Max
-
2.4
1.4
-
140
-
-
-
-
-
-
-
-
Unit
V
V
A
A
nA
m
pF
pF
pF
3 of 10
V
mA
W
dB
%
dBc