PSMN1R1-30PL NXP Semiconductors, PSMN1R1-30PL Datasheet - Page 8

• Manufacturer Part Number: PSMN1R1-30PL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R1-30PL
Product data sheet
Fig 7.
Fig 9.
R
(m Ω )
(pF)
DSon
10
10
10
C
5
4
3
5
4
3
2
1
0
10
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
0
-1
4
1
8
10
12
V
GS
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V
C
003aaf764
003aaf766
C
GS
(V)
rss
iss
(V)
10
16
Rev. 02 — 19 April 2011
2
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Fig 8.
Fig 10. Sub-threshold drain current as a function of
10
10
10
10
10
10
(A)
(A)
I
I
300
250
200
150
100
D
D
50
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
0
0
3.5
4.5
10
2
min
1
PSMN1R1-30PL
4
6
typ
2
V
GS
© NXP B.V. 2011. All rights reserved.
V
8
(V) = 2.4
GS
003aab271
003aad011
V
max
3
DS
(V)
2.6
2.8
(V)
10
3
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