PSMN1R1-30PL NXP Semiconductors, PSMN1R1-30PL Datasheet - Page 3

• Manufacturer Part Number: PSMN1R1-30PL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN1R1-30PL
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package.
(A)
I
500
400
300
200
100
D
0
mounting base temperature.
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
003a a f774
mb
(°C)
200
Rev. 02 — 19 April 2011
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
p
p
Fig 2.
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
P
(%)
GS
der
120
80
40
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
0
= 25 °C; I
function of mounting base temperature
Normalized total power dissipation as a
0
mb
mb
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
50
= 120 A;
Figure 1
Figure 1
PSMN1R1-30PL
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
260
Max
30
30
20
120
120
1609
338
120
1609
1.9
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
J
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