BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 9

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK7E07-55B

Manufacturer Part Number
BUK7E07-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT226 (I2PAK)
BUK7E07-55B_1
Product data sheet
Plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT226
4.5
4.1
A
1.40
1.27
A 1
0.85
0.60
b
IEC
D
L
b 1
1.3
1.0
D 1
b 1
0.7
0.4
3-lead TO-220AB
c
low-profile
JEDEC
1
e
max
11
D
E
REFERENCES
2
Rev. 01 — 29 January 2008
e
D 1
1.6
1.2
3
0
b
10.3
9.7
E
L 1
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
L
mounting
N-channel TrenchMOS standard level FET
base
3.30
2.79
A 1
L 1
Q
2.6
2.2
Q
A
PROJECTION
EUROPEAN
c
BUK7E07-55B
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
05-06-23
06-02-14
SOT226
9 of 12

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