BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 2

• Manufacturer Part Number: BUK7E07-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
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BUK7E07-55B_1
Product data sheet
Type number
BUK7E07-55B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
DR
DRM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Current is limited by chip power dissipation rating.
Continuous current is limited by package.
Conditions:
a) Maximum value not quoted.
b) Single-pulse avalanche rating limited by T
c) Repetitive avalanche rating limited by an average junction temperature of 170 C.
d) Refer to application note AN10273 for further information.
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
Ordering information
Limiting values
Package
Name
I2PAK
Description
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
j(max)
of 175 C.
Rev. 01 — 29 January 2008
Conditions
R
T
T
T
T
T
T
Unclamped inductive load; I
V
T
Repetitive rating defined in
mb
mb
mb
mb
mb
mb
j
DS
GS
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
= 20 k
55 V; V
GS
GS
GS
= 10 V; R
Figure 1
= 10 V; see
= 10 V; see
p
p
N-channel TrenchMOS standard level FET
10 s; see
10 s
GS
Figure 16
D
= 50
= 75 A;
Figure 2
Figure 2
Figure 3
starting at
and
BUK7E07-55B
3
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© NXP B.V. 2008. All rights reserved.
Min Max
-
-
-
-
-
-
-
-
-
-
-
55 +175
55 +175
Version
55
55
119
75
75
478
203
75
478
351
20
-
2 of 12
Unit
V
V
V
A
A
A
A
W
A
A
mJ
J
C
C