BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 8

• Manufacturer Part Number: BUK7E07-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of
(A)
(A)
I
I
S
D
100
100
V
function of gate-source voltage; typical values
V
source-drain (diode forward) voltage; typical
values
75
50
25
75
50
25
DS
GS
0
0
0.0
0
= 25 V
= 0 V
T
2
j
= 175 C
T
0.5
j
= 175 C
4
T
1.0
T
j
= 25 C
j
= 25 C
6
V
SD
V
003aac130
003aac128
GS
(V)
(V)
Rev. 01 — 29 January 2008
1.5
8
Fig 14. Gate-source voltage as a function of gate
Fig 16. Single-pulse and repetitive avalanche rating;
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive.
V
I
(A)
(V)
AL
10
GS
10
T
charge; typical values
See
avalanche current as a function of avalanche
time
10
10
j
1
2
1
10
8
6
4
2
0
= 25 C; I
N-channel TrenchMOS standard level FET
0
Table note 3
3
D
10
= 25 A
j
j
= 25 C.
= 150 C.
2
of
20
Table 3
BUK7E07-55B
V
DD
10
= 14 V
1
Limiting values.
40
© NXP B.V. 2008. All rights reserved.
V
1
DD
Q
(1)
(2)
(3)
G
t
AL
003aac131
003aac129
= 44 V
(nC)
(ms)
10
60
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