BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 6

• Manufacturer Part Number: BUK7E07-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R
(m )
(A)
I
DSon
D
300
200
100
T
function of drain-source voltage; typical values
T
of drain current; typical values
25
20
15
10
j
j
0
5
0
= 25 C
= 25 C
0
0
V
GS
(V) = 6.0
20
2
10
100
6.5
9.0
4
7.0
V
GS
7.5
6
(V) = 8.5
200
8.0
8
I
D
003aac123
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
V
003aac125
(A)
DS
Rev. 01 — 29 January 2008
(V)
9.0
10
10
300
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
a
R
1.5
0.5
(m )
DSon
2
1
0
T
of gate-source voltage; typical values
factor as a function of junction temperature
a
60
25
20
15
10
j
= 25 C; I
5
0
=
N-channel TrenchMOS standard level FET
5
----------------------------- -
R
DSon 25 C
R
DSon
D
0
= 25 A
10
BUK7E07-55B
60
15
120
© NXP B.V. 2008. All rights reserved.
003aab906
T
V
j
GS
( C)
003aac124
(V)
180
20
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