BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 3

• Manufacturer Part Number: BUK7E07-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E07-55B_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(1) Capped at 75 A due to package.
(%)
der
120
(A)
80
40
I
D
0
10
10
function of mounting base temperature
T
P
10
0
mb
1
3
2
10
der
= 25 C; I
1
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse.
100 %
100
Limit R
150
DSon
T
003aab844
mb
= V
( C)
1
DS
Rev. 01 — 29 January 2008
200
/ I
D
(1)
Fig 2. Continuous drain current as a function of
(1) Capped at 75 A due to package.
(A)
I
D
120
V
mounting base temperature
80
40
0
GS
0
N-channel TrenchMOS standard level FET
10 V
10
(1)
50
BUK7E07-55B
DC
100
V
DS
(V)
150
© NXP B.V. 2008. All rights reserved.
t
p
T
= 10 s
100 s
1 ms
10 ms
100 ms
003aac120
mb
003aac121
( C)
200
10
2
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