BUK7E07-55B NXP Semiconductors, BUK7E07-55B Datasheet - Page 4

• Manufacturer Part Number: BUK7E07-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4.
BUK7E07-55B_1
Product data sheet
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
1
1
2
3
10
Thermal characteristics
Parameter
thermal resistance from junction to mounting base -
thermal resistance from junction to ambient
6
0.2
0.1
0.05
0.02
single pulse
= 0.5
10
5
10
4
Rev. 01 — 29 January 2008
10
Conditions
vertical in still air
3
N-channel TrenchMOS standard level FET
10
2
BUK7E07-55B
Min
-
-
10
P
1
Typ
-
60
© NXP B.V. 2008. All rights reserved.
t
p
T
t
p
(s)
003aac122
Max
0.74
-
=
t
T
t
p
1
4 of 12
Unit
K/W
K/W