SAM3S8B Atmel Corporation, SAM3S8B Datasheet - Page 324

• Manufacturer Part Number: SAM3S8B
• Manufacturer: Atmel Corporation

19.3.5.3
324
324
SAM3S8/SD8
SAM3S8/SD8
Flash Full Erase Command
Table 19-7.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 19-8.
Step
...
n
n+1
n+2
n+3
...
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
Handshake Sequence
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write Command (Continued)
Full Erase Command
MODE[3:0]
...
ADDR0
ADDR1
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[15:0]
...
Memory Address LSB
Memory Address
...
*Memory Address++
*Memory Address++
DATA[15:0]
EA
0
11090A–ATARM–10-Feb-12
11090A–ATARM–10-Feb-12