ATmega16M1 Atmel Corporation, ATmega16M1 Datasheet - Page 20

• Manufacturer Part Number: ATmega16M1
• Manufacturer: Atmel Corporation

Specifications of ATmega16M1

• Flash (kbytes): 16 Kbytes
• Pin Count: 32
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 12
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 27
• Ext Interrupts: 27
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Uart: 1
• Can: 1
• Lin: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 11
• Adc Resolution (bits): 10
• Adc Speed (ksps): 125
• Analog Comparators: 4
• Resistive Touch Screen: No
• Dac Channels: 1
• Dac Resolution (bits): 10
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 1
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 14
• Input Capture Channels: 1
• Pwm Channels: 10
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

7.4
7.4.1
20
EEPROM Data Memory
ATmega16M1/32M1/64M1
EEPROM Read/Write Access
Figure 7-3.
The ATmega16M1/32M1/64M1 contains 512B/1K/2K bytes of data EEPROM memory. It is
organized as a separate data space, in which single bytes can be read and written. The
EEPROM has an endurance of at least 100,000 write/erase cycles. The access between the
EEPROM and the CPU is described in the following, specifying the EEPROM Address Regis-
ters, the EEPROM Data Register, and the EEPROM Control Register.
For a detailed description of SPI and Parallel data downloading to the EEPROM, see
Downloading” on page 302
mands” on page 291
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
however, lets the user software detect when the next byte can be written. If the user code con-
tains instructions that write the EEPROM, some precautions must be taken. In heavily filtered
power supplies, V
some period of time to run at a voltage lower than specified as minimum for the clock frequency
used.
these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
See “Preventing EEPROM Corruption” on page 21
On-chip Data SRAM Access Cycles
Address
CC
clk
Data
Data
WR
is likely to rise or fall slowly on power-up/down. This causes the device for
CPU
RD
respectively.
, and
Compute Address
“Parallel Programming Parameters, Pin Mapping, and Com-
T1
Memory Access Instruction
Table 7-2 on page
Address valid
T2
for details on how to avoid problems in
Next Instruction
24. A self-timing function,
T3
8209D–AVR–11/10
“Serial