RC28F320J3F75A Micron Technology Inc, RC28F320J3F75A Datasheet - Page 60

• Manufacturer Part Number: RC28F320J3F75A
• Manufacturer: Micron Technology Inc

Specifications of RC28F320J3F75A

• Lead Free Status / Rohs Status: Supplier Unconfirmed

13.5
Table 40: System Interface Information
13.6
Table 41: Device Geometry Definition (Sheet 1 of 2)
Datasheet
60
Notes:
1.
Notes:
1.
Offset
Offset
1Ch
1Dh
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
2Ch
27h
28h
2Ah
The value is 32 Bytes buffer write typical time out
The value is 32 Bytes buffer write typical time out
Length
Length
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
1
System Interface Information
The following device information can optimize system interface software.
Device Geometry Definition
This field provides critical details of the flash device geometry.
V
V
V
V
“n” such that typical single word program time-out = 2
“n” such that typical max. buffer write time-out = 2
“n” such that typical block erase time-out = 2
“n” such that typical full chip erase time-out = 2
“n” such that maximum word program time-out = 2
“n” such that maximum buffer write time-out = 2
“n” such that maximum block erase time-out = 2
“n” such that maximum chip erase time-out = 2
“n” such that device size = 2
Flash device interface:
“n” such that maximum number of bytes in write buffer = 2
Number of erase block regions within device:
1. x = 0 means no erase blocking; the device erases in “bulk”
2. x specifies the number of device or partition regions with one or more
contiguous same-size erase blocks
3. Symmetrically blocked partitions have one blocking region
4. Partition size = (total blocks) x (individual block size)
CC
CC
PP
PP
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
Numonyx
x8 async
28:00,29:00 28:01,29:00 28:02,29:00
Description
n
in number of bytes
Description
®
x16 async x8/x16 async
Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
n
ms
n
n
n
n
times typical
ms
times typical
times typical
n
n
µs
times typical
n
µs
n
Add.
1D:
1B:
1C:
1E:
20:
21:
22:
23:
24:
25:
26:
1F:
Code See Table Below
27:
28:
2A:
2B:
2C:
29:
--07
Code
--0A
Hex
--27
--36
--00
--00
--06
--00
--02
--03
--02
--00
--05
1
--02
--00
--00
--01
1
208032-03
128 µs
1024µs
256 µs
Value
64 µs
Jan 2011
2.7 V
3.6 V
0.0 V
0.0 V
1 s
NA
4 s
NA
32
x16
x8/
1
1
1