NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 8

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Description
Table 3.
Figure 2.
8/51
I/O8-15
Signal
I/O0-7
V
V
WP
NC
DU
RB
AL
CL
W
R
E
DD
SS
WP
CL
AL
W
E
R
Signal names
Logic block diagram
Data input/outputs for x16 devices
Address Latch Enable
Command register
Data input/outputs, address inputs, or command inputs for x8 and
x16 devices
Command Latch Enable
Chip Enable
Read Enable
Ready/Busy (open-drain output)
Write Enable
Write Protect
Supply voltage
Ground
Not connected internally
Do not use
register/counter
Command
interface
Address
logic
RB
P/E/R controller,
high voltage
generator
210403 - Rev 3
Function
I/O buffers & latches
I/O0-I/O7, x8/x16
I/O8-I/O15, x16
Page buffer
Y decoder
memory array
NAND flash
Numonyx SLC SP 70 nm
Power supply
Direction
Ground
Output
Input
Input
Input
Input
Input
Input
I/O
I/O
–
–
AI07561c