NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 33

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NAND512R3A2SZA6E

Manufacturer Part Number
NAND512R3A2SZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND512R3A2SZA6E

Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed

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Numonyx SLC SP 70 nm
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 17: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 17.
Table 18.
1. T
2. Input/output capacitances double on stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
and C
Input pulses voltages
Input and output timing ref. voltages
Input rise and fall times
Output circuit resistors, R
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
L
)
Input capacitance
Input/output
capacitance
Operating and AC measurement conditions
Capacitance
DD
Parameter
)
L
) (1 TTL GATE
A
IN
)
ref
Parameter
and C
(1)(2)
I/O
are not 100% tested.
210403 - Rev 3
Test conditions
V
V
1.8 V devices
1.8 V devices
1.8 V devices
1.8 V devices
IN
IL
3 V devices
3 V devices
3 V devices
3 V devices
conditions. Designers should check that the
= 0 V
Grade 6
= 0 V
Typ
Min
–40
1.7
2.7
0.4
0
NAND Flash
DC and AC parameters
8.35
0.9
1.5
30
50
5
Max
10
10
Max
1.95
V
3.6
2.4
85
DD
Unit
Units
pF
pF
pF
°C
ns
V
V
V
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