NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 42

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NAND512R3A2SZA6E

Manufacturer Part Number
NAND512R3A2SZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND512R3A2SZA6E

Cell Type
NAND
Density
512Mb
Access Time (max)
15us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
64M
Supply Current
15mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed

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DC and AC parameters
Figure 26. Page program AC waveforms
42/51
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
(Write Cycle time)
tWLWL
cycle 1
Add.N
cycle 2
Add.N
Address Input
cycle 3
Add.N
cycle 4
Add.N
tWLWL
210403 - Rev 3
N
Data Input
tWHBL
(Program Busy time)
Last
tWLWL
Confirm
tBLBH2
Code
10h
Program
Page
Numonyx SLC SP 70 nm
Read Status Register
70h
SR0
ai08037

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