NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 29

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Numonyx SLC SP 70 nm
Refer to
Table 14.
Figure 15. Bad block management flowchart
Table 14
Operation
Program
NAND Flash failure modes
Erase
Read
for the procedure to follow if an error occurs during an operation.
Block Address =
START
Block 0
= FFh?
block?
210403 - Rev 3
Data
Last
END
YES
YES
NO
NO
Bad Block table
Update
Block Address
Increment
Block Replacement
Block Replacement
Procedure
ECC
AI07588C
Software algorithms
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