NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 7

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Numonyx SLC SP 70 nm
Table 2.
Figure 1.
NAND512W3A2S
NAND512W4A2S
NAND512R3A2S
NAND512R4A2S
Root part
number
Product description
Logic diagram
Density
Mbit
512
width
Bus
x16
x16
x8
x8
512+16
512+16
Words
Words
256+8
256+8
Bytes
Bytes
Page
size
WP
CL
AL
W
R
E
16K+512
16K+512
8K+256
8K+256
Words
Words
Block
Bytes
Bytes
size
NAND flash
4096 blocks
32 pages x
Memory
V DD
210403 - Rev 3
V SS
array
2.7 to 3.6 V
1.7 to 1.95 V
Operating
voltage
8
RB
I/O8-I/O15, x16
I/O0-I/O7, x8/x16
Random
access
12 µs
15 µs
Max
AI07557C
Sequential
access
30 ns
50 ns
Min
Timings
program
200 µs
Page
Typ
Block
erase
2 ms
Typ
Description
VFBGA63
Package
TSOP48
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