NAND512R3A2SZA6E Micron Technology Inc, NAND512R3A2SZA6E Datasheet - Page 27

• Manufacturer Part Number: NAND512R3A2SZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND512R3A2SZA6E

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 15us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Numonyx SLC SP 70 nm
Table 12.
6.8
Table 13.
NAND512W3A2S
NAND512W4A2S
NAND512R3A2S
NAND512R4A2S
Part number
SR0
Bit
Status register bits
Read electronic signature
The device contains a manufacturer code and device code. To read these codes two steps
are required:
1.
2.
Refer to
Electronic signature
first use one bus write cycle to issue the Read Electronic Signature command (90h),
followed by an address input of 00h
then perform two bus read operations – the first reads the manufacturer code and the
second, the device code. Further bus read operations are ignored.
Table 13: Electronic
I/O organization
x16
x16
x8
x8
Generic error
Name
signature, for information on the addresses.
Supply voltage
210403 - Rev 3
1.8 V
3 V
Logic level
Manufacturer code
‘1’
‘0’
0020h
0020h
20h
20h
Error – operation failed
No error – operation successful
Definition
Device operations
Device code
0056h
0046h
76h
36h
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