LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 5

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LH28F008SAT-12

Manufacturer Part Number
LH28F008SAT-12
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F008SAT-12

Cell Type
NOR
Density
8Mb
Access Time (max)
120ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
1M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant
8M (1M × 8) Flash Memory
WSM activity, providing capability for both hardware sig-
nal of status (versus software polling) and status mask-
ing (interrupt masking for background erase, for
example). Status polling using RY
CPU overhead and system power consumption. When
low, RY
erase or byte write operation. RY
the WSM is ready for new commands, block erase is
suspended or the device is in deep power down mode.
mercial temperature range (0°C to +70°C) and over V
supply voltage range (4.5 V to 5.5 V and 4.75 V to
5.25 V). I
cal, 35 mA maximum at 8 MHz.
CMOS Standby mode is enabled.
pin is at GND, minimizing power consumption and pro-
viding write protection. I
is 0.20 µA typical. Reset time of 400 ns is required from
PWD switching high until outputs are valid to read
attempts. Equivalently, the device has a wake time of
1 µs from PWD high until writes to the Command User
Interface are recognized by the LH28F008SA. With PWD
at GND, the WSM is reset and the Status Register is
cleared.
PRINCIPLES OF OPERATION
to manage write and erase functions. The Write State
Machine allows for 100% TTL-level control inputs; fixed
power supplies during block erasure and byte write; and
minimal processor overhead with SRAM like interface
timings.
powerdown mode (see Bus Operations), the
LH28F008SA functions as a read-only memory. Manipu-
lation of external memory-control pins allow array read,
standby and output disable operations. Both Status
Register and intelligent identifiers can also be accessed
through the Command User Interface when V
high voltage is applied to the V
voltage on V
byte writing of the device. All functions associated with
altering memory contents - byte write, block erase,
status and intelligent identifier - are accessed via the
Command User Interface and verified through the
Status Register.
The RY
Maximum access time is 85 ns (t
When the CE
A Deep Powerdown mode is enabled when the PWD
The LH28F008SA includes on-chip write automation
After initial device powerup, or after return from deep
This same subset of operations is also available when
    »
/ BY
CC
    »
/ BY
    »
indicates that the WSM is performing a block
active current (CMOS Read) is 20 mA typi-
PP
    »
output gives an additional indicator of
enables successful block erasure and
    »
and PWD pins are at V
CC
current in deep power down
PP
    »
/ BY
pin. In addition, high
    »
/ BY
ACC
    »
high indicates that
    »
minimizes both
) over the com-
CC
PP
, the I
= V
PPL
CC
CC
.
MEMORY MAP
sor write timings. Command User Interface contents
serve as input to the WSM, which controls the block
erase and byte write circuitry. Write cycles also inter-
nally latch addresses and data needed for byte write or
block erase operations. With the appropriate command
written to the register, standard microprocessor read
timings output array data, access the intelligent identi-
fier codes, or output byte write and block erase status
for verification.
Commands are written using standard microproces-
DFFFF
CFFFF
EFFFF
BFFFF
AFFFF
FFFFF
D0000
C0000
9FFFF
8FFFF
7FFFF
6FFFF
5FFFF
4FFFF
3FFFF
2FFFF
1FFFF
0FFFF
E0000
B0000
A0000
F0000
90000
80000
70000
60000
50000
40000
30000
20000
10000
00000
Figure 4. Memory Map
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
LH28F008SA
28F008SA-4
5

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