LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 15

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LH28F008SAT-12

Manufacturer Part Number
LH28F008SAT-12
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F008SAT-12

Cell Type
NOR
Density
8Mb
Access Time (max)
120ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP
Program/erase Volt (typ)
11.4 to 12.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
1M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant
8M (1M × 8) Flash Memory
writes for V
Since both WE
write, driving either to V
mand User Interface architecture provides an added
level of protection since alteration of memory contents
only occurs after successful completion of the two-setup
command sequences.
V
provides an additional level of memory protection.
Power Dissipation
consider battery power consumption not only during
IH
A system designer must guard against spurious
Finally, the device is disabled until PWD is brought to
When designing portable systems, designers must
, regardless of the state of its control inputs. This
CC
voltages above V
CONTINUE ERASE
    »
and CE
READ STATUS
WRITE B0H
WRITE 70H
WRITE FFH
WRITE D0H
REGISTER
READING
SR.7 = 1
SR.6 = 1
START
DONE
?
?
?
YES
YES
YES
IH
    »
must be low for a command
will inhibit writes. The Com-
NO
NO
COMPLETED
NO
ERASE HAS
Figure 7. Erase Suspend/Erase Resume Flowchart
LKO
when V
PP
is active.
Standby/Read
OPERATION
Standby
Write
Write
Write
Read
Write
BUS
device operation, but also for data retention during
system idle time. Flash nonvolatility increases usable
battery life, because the LH28F008SA does not con-
sume any power to retain code or data when the sys-
tem is off.
mode ensures extremely low power dissipation even
when system power is applied. For example, portable
PCs and other power sensitive applications, using an
array of LH28F008SAs for solid-state storage, can lower
PWD to V
ligible power consumption. If access to the LH28F008SA
is again needed, the part can again be read, following
the t
is first raised back to V
Only and Write Operations and Figures 8 and 9 for more
information.
Erase Resume
Status Register
Read Array
COMMAND
In addition, the LH28F008SA’s deep powerdown
Suspend
PHQV
Erase
Read
IL
and t
in standby or sleep modes, producing neg-
PHWL
Data = B0H
Data = 70H
Check RY/BY
V
V
Status Register
Check SR.7
1 = Ready, 0 = Busy
Toggle OE or CE to Update
Status Register
Check SR.6
1 = Suspended
Data = FFH
Read array data from block
other than that being erased.
Data = D0H
OH
OL
= Busy or Read
= Ready,
wakeup cycles required after PWD
IH
COMMENTS
. See AC Characteristics - Read-
28F008SA-7
LH28F008SA
15

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