LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 4

• Manufacturer Part Number: LH28F008SAT-12
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAT-12

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

LH28F008SA
PIN DESCRIPTION
4
DQ
SYMBOL
A
RY
0
PWD
GND
0
V
V
WE
CE
OE
- A
- DQ
PP
CC
»
/ BY
»
»
19
»
7
INPUT
INPUT/OUTPUT
INPUT
INPUT
INPUT
INPUT
OUTPUT
SUPPLY
SUPPLY
TYPE
ADDRESS INPUTS: For memory addresses. Addresses are internally latched during
a write cycle.
DATA INPUT/OUTPUTS: Inputs data and commands during Command User Interface
write cycles; outputs data during memory array. Status Register and Identifier read
cycles. The data pins are active high and float to tri-state off when the chip is deselected
or the outputs are disabled. Data is internally latched during a write cycle.
CHIP ENABLE: Activates the device’s control logic input buffers, decoders, and
sense amplifiers. CE
reduces power consumption to standby levels.
POWERDOWN: Puts the device in deep powerdown mode. PWD is active low; PWD
high gates normal operation. PWD also locks out block erase or byte write
operations when active low, providing data protection during power transitions.
OUTPUT ENABLE: Gates the device’s outputs through the data buffers during a
read cycle. OE
WRITE ENABLE: Controls writes to the Command User Interface and array blocks.
WE is active low. Addresses and data are latched on the rising edge of the
WE Pulse.
READY/BUSY : Indicates the status of the internal Write State Machine. When low, it
indicates that the WSM is performing a block erase or byte write operation. RY
high indicates that the WSM is ready for new commands, block erase is suspended or
the device is in deep powerdown mode. RY
to tri-state off when the chip is deselected or data outputs are disabled.
BLOCK ERASE/BYTE WRITE POWER SUPPLY: for erasing blocks of the array or
writing bytes of each block.
NOTE: With V
DEVICE POWER SUPPLY: (5 V ±10%, 5 V ±5%)
GROUND
PP
»
is active low.
< V
PPLMAX
»
is active low: CE
, memory contents cannot be altered.
NAME AND FUNCTION
»
high deselects the memory device and
»
/ BY
»
i s always active and does NOT float
8M (1M × 8) Flash Memory
»
/ BY
»