LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 21

• Manufacturer Part Number: LH28F008SAT-12
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAT-12

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

8M (1M × 8) Flash Memory
AC CHARACTERISTICS - Write Operations
NOTES:
1. Read timing characteristics during erase and byte write operations are the same as during read-only operations.
2. Sampled, not 100% tested.
3. Refer to Command Definitions Table for Valid A
4. Refer to Command Definitions Table for valid D
5. The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard Intel flash
6. Byte write and block erase durations are measure to completion (SR.7 = 1. RY
7. See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteristics.
8. See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
t
t
t
t
t
t
t
t
t
t
t
WHQV
WHQV
t
t
t
t
t
WLWH
WHWL
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHGL
PHWL
WHRL
AVAV
ELWL
QVVL
Refer to AC Characteristics for Read-Only Operations.
memory, including byte program and verify (byte write) and block precondition, precondition verify, erase and erase verify (block erase).
tion of byte write/block erase success (SR.3/4/5 = 0).
SYMBOL
1
2
t
t
t
t
t
WHP
t
t
t
t
t
t
VPS
t
VPH
WC
WP
OS
DH
OH
PS
CS
AS
AH
Write Cycle Time
PWD High Recovery to WE
Going Low
CE
WE Pulse Width
V
Address Setup to WE
Going High
Data Setup to WE
Going High
Data Hold from WE High
Address Hold from WE High
OE
WE Pulse Width High
WE High to RY
Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before Read
V
RY
PP
PP
»
»
/ BY
»
Setup to WE Going Low
Setup to WE Going High
Hold from Valid SRD,
Hold from WE High
»
PARAMETER
High
»
/ BY
»
Going
IN
IN
for byte write or block erasure.
for byte write or block erasure.
LH28F008SA-85
MIN.
100
0.3
85
10
40
40
40
10
30
1
5
6
0
5
0
V
CC
± 5%
1
MAX.
100
7
LH28F008SA-85
MIN.
100
0.3
90
10
40
40
40
10
30
1
5
5
6
0
0
V
»
/ BY
CC
»
± 10%
= V
MAX.
100
OH
). V
8
PP
should be held at V
LH28F008SA-12
MIN.
120
100
0.3
10
40
40
40
10
30
1
5
5
6
0
0
V
CC
± 10%
MAX.
100
8
PPH
LH28F008SA
UNIT
until determina-
µs
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
µs
s
NOTE
2
2
3
4
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