NOII4SM6600A-QDC ON Semiconductor, NOII4SM6600A-QDC Datasheet - Page 3

• Manufacturer Part Number: NOII4SM6600A-QDC
• Manufacturer: ON Semiconductor

Specifications of NOII4SM6600A-QDC

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Specifications
General Specifications
Electro Optical Specifications
Pixel Architecture
Pixel Size
Resolution
Pixel Rate
Shutter Type
Full Frame Rate
FPN (local)
PRNU (local)
Conversion Gain
Output Signal Amplitude
Saturation Charge
Sensitivity (peak)
Sensitivity (visible)
Peak QE * FF
Peak Spectral Response
Fill Factor
Dark Current
Dark Signal Non Uniformity
Temporal Noise
Signal/Noise Ratio
Dynamic Range
Spectral Sensitivity Range
Optical Cross Talk
Power Dissipation
Parameter
Parameter
3T-Pixel
3.5 µm x 3.5 µm
2210 x 3002
40 MHz
Electronic Rolling Shutter
5 frames/second
<0.20%, 2 LSB10
<1.5%
43 µV/e
0.6V
21500 e
411 V.m
4.83 V/lux.s
328 V.m
2.01 V/lux.s
25%
0.13 A/W
35%
3.37 mV/s
78 e-/s
8.28 mV/s
191 e-/s
24 RMS e-
895:1 (40 dB)
59 dB
400 - 1000 nm
15%
4%
225 mW
-
2
-
Specification
2
Specification
/W.s
/W.s
Rev. 9 | www.onsemi.com | Page 3 of 32
The resolution and pixel size results in a 7.74 mm x 10.51 mm
optical active area.
Using a 40 MHz system clock and 1 or 2 parallel outputs
Increases with ROI read out and/or subsampling
%RMS of saturation signal
RMS of signal level
At output (measured)
At nominal conditions
At 650 nm
(85 lux = 1 W/m
400-700 nm
(163 lux = 1 W/m
Average QE*FF = 22% (visible range)
Average SR*FF = 0.1 A/W (visible range)
See the section
Light sensitive part of pixel (measured)
Typical value of average dark current of the whole pixel array
(at 21°C)
Dark current RMS value (at 21°C)
Measured at digital output (in the dark)
Measured at digital output (in the dark)
To the first neighboring pixel
To the second neighboring pixel
Typical (including ADCs)
2
Spectral Response Curve
)
2
)
Remarks
Remarks
NOII4SM6600A
on page 4.