NOIS1SM0250A-HHC ON Semiconductor, NOIS1SM0250A-HHC Datasheet - Page 9

• Manufacturer Part Number: NOIS1SM0250A-HHC
• Manufacturer: ON Semiconductor

Specifications of NOIS1SM0250A-HHC

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Sensor Architecture
The base line of the STAR250 sensor design consists of an
imager with a 512 by 512 array of active pixels at 25 m pitch.
The detector contains on-chip correction for FPN in the column
amplifiers, a programmable gain output amplifier, and a 10-bit
ADC. Through additional preset registers, the start position of a
window can be programmed to enable fast read out of only part
of the detector array.
Pixel Structure
The image sensor consists of several building blocks as outlined
in
square pixels at 25 m pitch. Unlike classical designs, the pixels
of this sensor contain four photodiodes. This configuration
enhances the MTF and reduces the PRNU.
electrical diagram of the pixel structure. The four photodiodes
are connected in parallel to the reset transistor (T1). Transistor
T2 converts the charge, collected on the photo diode node, to a
voltage signal that is connected to the column bus by T3. The
reset and read entrance of the pixel are connected to one of the
Y shift registers.
Figure
Ld_Y
Sync_YL
Clk_YL
A8...A0
Ld_X
R
S
7. The central element is a 512 by 512 pixel array with
9
9
9
9
Figure 8
Rev. 7 | www.onsemi.com | Page 9 of 22
512
Figure 7. STAR250 Schematic
512
512
shows an
Sel
Rst
Decoder / Shift Register
1024
Column Amplifiers
512 by 512 Pixels
Col
Pixel Array
X Address
Figure 8. STAR250 Pixel Structure
1024
Reset
T1
512
Rst
Sig
Progr. Gain
Amplifier
T2
NOIS1SM0250A
Read
T3
10
Clk_YR
SyncYR
D9...D0
Aout
Clk_ADC
Ain